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Article Dans Une Revue Applied Surface Science Année : 2009

The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots

N. Sellami
  • Fonction : Auteur
Adel Mellit
  • Fonction : Auteur
A. Sahli
  • Fonction : Auteur
M. A. Maaref
  • Fonction : Auteur

Résumé

In this paper, we present a study of photoluminescence (PL) from AlInAs/AlGaAs quantum dots (QDs) structures grown by molecular beam epitaxy. Specifically, we describe the effects of the temperature and of the excitation density on the photoluminescence circular polarization. We have found that the circular polarization degree depends on temperature. On the other hand, the study of the excitation density dependent circular polarization PL degree shows that the last increases in the case of the sample of weak dot density. However, in the case of large dot density, it is almost constant in the excitation density range from 0.116Wcm (2) to 9Wcm (2). (C) 2009 Elsevier B.V. All rights reserved.

Dates et versions

hal-01229251 , version 1 (16-11-2015)

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Citer

N. Sellami, Adel Mellit, A. Sahli, M. A. Maaref, Christophe Testelin, et al.. The effect of the excitation and of the temperature on the photoluminescence circular polarization of AlInAs/AlGaAs quantum dots. Applied Surface Science, 2009, 256 (5), pp.1409-1412. ⟨10.1016/j.apsusc.2009.08.097⟩. ⟨hal-01229251⟩
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