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Article Dans Une Revue Thin Solid Films Année : 2014

Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma

Résumé

In this work SiN x thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthal-ate (PET) substrates. First results of SiN x multilayers stacked and stacks of SiN x single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10 −3 g/m 2 day) for stacked SiN x single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiN x single-layers without Ar plasma treatment.

Domaines

Matériaux

Dates et versions

hal-01228635 , version 1 (17-11-2015)

Identifiants

Citer

S Majee, Maria Fátima Cerqueira, D Tondelier, J.C. Vanel, B Geffroy, et al.. Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma. Thin Solid Films, 2014, 575, pp.72-75. ⟨10.1016/j.tsf.2014.10.009⟩. ⟨hal-01228635⟩
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