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Article Dans Une Revue ECS Journal of Solid State Science and Technology Année : 2014

Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

Résumé

High quality double-position-boundaries free 3C-SiC epilayers have been successfully grown on on-axis (0001) 4H-SiC by chemical vapor deposition at optimized conditions as observed with optical microscopy and X-ray diffraction. The effect of the growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H-2 ratio, N-2 addition and pressure, on the quality of the grown layers is investigated. Different techniques, including microscopic and spectroscopic techniques, are used to characterize the epilayers. High resolution X-ray diffraction shows 2 theta-omega curve with full width at half maximum of only 16 arcsec for the (111) reflection detected from a 35 mu m thick 3C-SiC layer, showing the good structural quality of the layer. Reciprocal space maps confirm the absence of double-position-boundaries in a large depth of the layers. Low temperature photoluminescence measurement shows clear near-bandgap emission with sharp and single peaks, which further verifies the high quality of the epilayers. (C) 2014 The Electrochemical Society. All rights reserved.

Domaines

Matériaux

Dates et versions

hal-01226019 , version 1 (07-11-2015)

Identifiants

Citer

Xiaojian Li, H. Jacobson, Alexandre Boulle, D. Chaussende, A. Henry. Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC. ECS Journal of Solid State Science and Technology, 2014, 3 (4), pp.P75-P81. ⟨10.1149/2.012404jss⟩. ⟨hal-01226019⟩
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