Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2015

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Abstract

We determine the internal quantum efficiency of strain-balanced AlGaN-InGaN-GaN hetero-structures designed for yellow-amber light emission, by using a recent model based on the kinetics of the photoluminescence decay initiated by Yoshiya Iwata, Ryan G. Banal, Shuhei Ichikawa, Mitsuru Funato, and Yoichi Kawakami, Journal of Applied Physics 117, 075701 (2015). Our results indicate that low temperature internal quantum efficiencies sit in the 50 % range and we measure that adding an AlGaN layer increases the internal quantum efficiency from 50% up to 57 % with respect to the GaN-InGaN case. More dramatic, it almost doubles from 2.5 % up to 4.3 % at room temperature.
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Dates and versions

hal-01203313 , version 1 (22-09-2015)

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Thi Huong Ngo, Bernard Gil, Pierre Valvin, B. Damilano, Kaddour Lekhal, et al.. Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures. Applied Physics Letters, 2015, 107, pp.122103. ⟨10.1063/1.4931624⟩. ⟨hal-01203313⟩
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