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Journal Articles Applied Physics Letters Year : 2014

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

Abstract

While the integration of graphene on semiconductor surfaces is important to develop new applications, epitaxial graphene has only been integrated on SiC substrates or 3C-SiC/Si templates. In this work, we explore the possibility of growing graphene on AlN/Si(111) templates. Using a chemical vapor deposition process with propane as the carbon source, we have obtained graphitic films (from 2 to 10 graphene layers) on AlN/Si(111) while preserving the morphology of the AlN layer beneath the graphitic film. This study is an important step for the integration of graphene with semiconductors other than SiC.
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hal-01200742 , version 1 (17-09-2015)

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A. Michon, Antoine Tiberj, S. Vezian, E. Roudon, D. Lefebvre, et al.. Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition. Applied Physics Letters, 2014, 104 (7), pp.071912. ⟨10.1063/1.4866285⟩. ⟨hal-01200742⟩
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