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Communication Dans Un Congrès Année : 2014

Influence of Technological and Geometrical Parameters on Low-Frequency Noise in SOI Omega-Gate Nanowire NMOSFETs

Résumé

A study of the interface quality in ultra-scaled omega-gate nanowire NMOSFETs, with variant technological boosters, is presented by low-frequency noise (LFN) measurements. Excellent quality of the interfaces has been achieved down to narrow width (10nm), and whatever the technological splits. In particular, efficient tensile stressor has been demonstrated with high performance enhancement and preserved noise performance fulfilling the ITRS 1/f LFN road map.
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Dates et versions

hal-01182167 , version 1 (30-07-2015)

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Koyama M., Cassé M., Coquand R., Barraud S., Gérard Ghibaudo, et al.. Influence of Technological and Geometrical Parameters on Low-Frequency Noise in SOI Omega-Gate Nanowire NMOSFETs. 2014 International Symposium on VLSI Technology, Systems and Apllications, Proceedings of Technical Program (2014 VLSI-TSA), Apr 2014, Taiwan, China. pp.54-55, ⟨10.1109/VLSI-TSA.2014.6839653⟩. ⟨hal-01182167⟩
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