Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Résumé

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.

Dates et versions

hal-01179181 , version 1 (21-07-2015)

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Pierre Corfdir, Amelie Dussaigne, Henryk Teisseyre, Tadeusz Suski, Izabella Grzegory, et al.. Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates. International Workshop on Nitride semiconductors., Oct 2012, Sapporo, Japan. pp.08JC01, ⟨10.7567/JJAP.52.08JC01⟩. ⟨hal-01179181⟩
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