Design of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 model - Archive ouverte HAL
Article Dans Une Revue International Journal of Circuit Theory and Applications Année : 2015

Design of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 model

Résumé

This paper presents a fast and accurate way to design and optimize LC oscillators using the inversion coefficient (IC). This methodology consists of four steps: linear analysis, nonlinear analysis, phase noise analysis, and optimization using a figure of merit. For given amplitude of oscillation and frequency, we are able to determine all the design variables in order to get the best trade-off between current consumption and phase noise. This methodology is demonstrated through the design of Pierce and cross-coupled oscillators and has been verified with BSIM6 metal oxide semiconductor field effect transistor compact model using the parameters of a commercial advanced 40 nm complementary metal oxide semiconductor process.

Domaines

Electronique
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Dates et versions

hal-01174123 , version 1 (08-07-2015)

Identifiants

  • HAL Id : hal-01174123 , version 1

Citer

Guitton Gabrielle, Anurag Mangla, Chalkiadaki Maria-Anna, François Fadhuile, Thierry Taris, et al.. Design of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 model. International Journal of Circuit Theory and Applications, 2015, pp.21-28. ⟨hal-01174123⟩
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