InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate - Archive ouverte HAL
Poster De Conférence Année : 2013

InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate

Résumé

We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.
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Dates et versions

hal-01167841 , version 1 (24-06-2015)

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Citer

Kamil Klaime, Cosimo Calo, Rozenn Piron, Cyril Paranthoen, Dame Thiam, et al.. InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate. Compound Semiconductor Week 2013 - 25th International Conference on Indium Phosphide and Related Materials (IPRM 2013), May 2013, Kobe, Japan. IEEE (ISBN: 978-1-4673-6130-9), IEEE Xplore Digital Library, pp.1-2, 2013, International Conference on Indium Phosphide and Related Materials (IPRM), 2013. ⟨10.1109/ICIPRM.2013.6562595⟩. ⟨hal-01167841⟩
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