Article Dans Une Revue Microelectronic Engineering Année : 2010

Copper electroplating into deep microvias for the “SiP” application

Résumé

In order to anticipate the further demands of miniaturization and integration of ‘‘System-in-Package”, the technology of 3D through-silicon-vias (TSVs) has been developed at NXP Semiconductors. The sputtering and the electroplating have been chosen for realize respectively a copper seed layer and a thick copper deposition inside 75 lm wide and hundreds micrometer deep microvias. The microvias, for an aspect- ratio (AR) up to 2.3, can be successfully covered by a sputtered 3 lm thick copper layer. To achieve a thick microvia filling, the pulsed current is preferred and a perpendicular electrolyte flow is critical. With an 11 lm thick patterned photoresist mask on the field, the 75 lm diameter and 180 lm deep microvias can be more-than-the-half filled using the ‘‘superfilling” recipe when the field depositing layer reaches the mask level. Such partially filled microvias exhibit excellent electrical resistances within the range of 4 mX.
HAL

Référence hal-00664411 Objet présenté à une conférence Cheng Fang, Alain Le Corre, Dominique Yon. Copper electroplating into deep microvias for the ''SiP'' application. The 2010 International workshop on "Materials for Advanced Metallization" (MAM 2010), Mar 2010, Mechelen, Belgium. pp.749-753, ⟨10.1016/j.mee.2010.07.034⟩. ⟨hal-00664411⟩

Dates et versions

hal-01166220 , version 1 (22-06-2015)

Identifiants

Citer

Cheng Fang, Alain Le Corre, Dominique Yon. Copper electroplating into deep microvias for the “SiP” application. Microelectronic Engineering, 2010, The 2010 International workshop on “Materials for Advanced Metallization” - MAM 2010, 88 (5), pp.749-753. ⟨10.1016/j.mee.2010.07.034⟩. ⟨hal-01166220⟩
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