Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy
Résumé
C-doped Mn5Ge3 compound is ferromagnetic at temperature up to 430 K. Hence it is a potential spin injector into group-IV semiconductors. Segregation and diffusion of Mn at the Mn5Ge3 /Ge interface could severely hinder the efficiency of the spin injection. To avoid these two phenomena we investigate the growth of Mn5Ge3 and C-doped Mn5Ge3 films on Ge(111) substrates by molecular beam epitaxy at room-temperature. The reactive deposition epitaxy method is used to deposit these films. Reflection high energy electron diffraction, X-ray diffraction analysis, transmission electron microscopy and atomic force microscopy indicate that the crystalline quality is very high. Magnetic characterizations by superconducting quantum interference device and ferromagnetic resonance reinforce the structural analysis results on the thin films quality.
| Origine | Fichiers produits par l'(les) auteur(s) |
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