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Article Dans Une Revue Electronics Letters Année : 2015

Design and Measurement of a Class EF2 Power Oscillator

Résumé

A class EF2 power oscillator designed in standard 130 nm CMOS at 2.5 GHz frequency is presented. The oscillator relies on a direct path based on a power amplifier and a feedback path based on passive elements and an MOS varactor. Class EF2 is used to reduce voltage stress across the switch, enabling a higher output power for modern transistors with low breakdown voltage. The measurement on a class EF2 power oscillator at radio frequency (RF) is presented for the first time. The circuit achieves 17.65 dBm output power from a 2.5 V supply voltage with 27.1% DC-RF efficiency and presents a 150 MHz tuning range. The measured phase noise is −101.6 dBc/Hz at 1 MHz offset. The circuit was implemented in standard 130 nm CMOS technology and consumed a total area of 1.95 mm2. To the authors' knowledge this class EF2 power circuit has never been presented either at RF frequencies or in an integrated technology.
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Dates et versions

hal-01152961 , version 1 (18-05-2015)

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Heider Madureira, Nathalie Deltimple, Eric Kerherve, Magalie Dematos, Sandro Haddad. Design and Measurement of a Class EF2 Power Oscillator. Electronics Letters, 2015, 51 (10), pp.744-745. ⟨10.1049/el.2014.4295⟩. ⟨hal-01152961⟩
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