We analyse the electrical properties of multilayer made of silicon rich oxide (SRO) and silicon rich nitride (SRN) doped with Neodymium (Nd) layers integrated in MIS (Metal Insulator Semiconductor) device. The aim of such a study consists in fabricating thin layer for future electroluminescent devices doped with rare earth ions (Nd) which benefit from the efficient sensitizing effect of Si nanoclusters (Sinc) towards the Nd3+ ions. The deposition has been performed by reactive magnetron sputtering, consisting in the formation of alternating SRO/SRN films, with nominal thickness of 3 nm for each layer. The multilayer is then composed with 9 periods of SRO/SRN films, which was subsequently submitted to an optimized annealing treatment. The multilayer is deposited on p-type (111) oriented silicon substrate cm. Next, aluminum waswith resistivity in the range 0.001-0.005 thermally evaporated on active layer. Both aluminum and active layers were patterned by wet etching to define the geometry of the device. A second thermal evaporation of aluminum on the back surface was carried out to ensure the ohmic contact with the p-type crystalline silicon. Finally, the devices were annealed into forming gas (H2:N2, 10%) at 390°C to stabilize the electrical properties of the devices. The conduction mechanisms of the MIS structures were studied by analysing thermal and bias dependences of the carriers transport in relation with the silicon content (9, 11 and 15%) of the SRO layer.