Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014
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hal-01151851 , version 1 (13-05-2015)

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  • HAL Id : hal-01151851 , version 1

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Nicolas Gosset, Julien Ladroue, Thomas Tillocher, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Improvement of GaN Deep Etched Surface State by Fluorination Dedicated to Power Devices. 226th meeting of the Electrochemical Society, Oct 2014, Cancun, Mexico. ⟨hal-01151851⟩
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