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Article Dans Une Revue Nanoscale Research Letters Année : 2011

Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films

Résumé

In this article, the microstructure and photoluminescence (PL) properties of Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess as determined by Rutherford backscattering spectrometry. Fourier transform infrared (FTIR) spectra show that a phase separation occurs during the annealing because of the condensation of the Si excess resulting in the formation of silicon nanoparticles (Si-np) as detected by high-resolution transmission electron microscopy and X-ray diffraction (XRD) measurements. Under non-resonant excitation at 488 nm, our Nd-doped SRSO films simultaneously exhibited PL from Si-np and Nd 3+ demonstrating the efficient energy transfer between Si-np and Nd 3+ and the sensitizing effect of Si-np. Upon increasing the Nd concentration from 0.08 to 4.9 at.%, our samples revealed a progressive quenching of the Nd 3+ PL which can be correlated with the concomitant increase of disorder within the host matrix as shown by FTIR experiments. Moreover, the presence of Nd-oxide nanocrystals in the highest Nd-doped sample was established by XRD. It is, therefore, suggested that the Nd clustering, as well as disorder, are responsible for the concentration quenching of the PL of Nd 3+ .
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hal-01139259 , version 1 (03-04-2015)

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Olivier Debieu, Julien Cardin, Xavier Portier, Fabrice Gourbilleau. Effect of the Nd content on the structural and photoluminescence properties of silicon-rich silicon dioxide thin films. Nanoscale Research Letters, 2011, 6 (1), pp.1-8. ⟨10.1016/j.nimb.2003.11.037⟩. ⟨hal-01139259⟩
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