Molecular dynamics calculations of CH 3 sticking coefficient onto diamond surfaces
Résumé
A molecular dynamics model is implemented in a way dedicated to simulate initial conditions close to microwave plasma deposition of thick single crystal diamond films. The sticking coefficient of CH 3 radical is obtained for (111) and (100) surface at three gas and substrate temperatures: 1120, 1200 and 1500 K. A low value of 5 · 10 −4 is obtained, which is consistent with experimental findings claiming values less than 0.01 or equating to 8 · 10 −3 at 1120 K.
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