Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots
Résumé
We report on the structural and optical properties of (In,Ga)AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In,Ga)As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840nm. These results reveal the potential of (In,Ga)AsN as an efficient active medium monolithically integrated on Si for laser applications.
Mots clés
Optical properties
Photoluminescence spectroscopy
Charge recombination
Electronic bandstructure
Chemical elements
quantum dots
Laser applications
Room-temperature photoluminescence
Semiconductors
InGaAsN/GaP
photonics on silicon
Time-resolved photoluminescence
room temperature photoluminescence
dilute nitride
carrier dynamics
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|
Loading...