Quality of the ohmic contact on 4H-SiC p + area and its impact on direct conduction and voltage capability
Résumé
Based upon the characterization of two types of 4H-SiC JBS diodes compared to SiC Shottky diode, this paper prensents the influence of the p + activation and well-contacting on the electrical characteristics in forward and reverse mode. The papers will mainly focus on the forward current level, lower without p + activation than with a fully efficient p + layer, compared to state-of-the-art devices. The reverse leakage current is also determining, since it will be higher if there is only a Schottky barrier to protect the blocking mode. After discussing the static results, dynamic mea-surements will be performed to confirm the non-activation of some p + and analyzing its influence on switching mode. Finally, a dsetructive measurement of the surge current of each diode will complete the study.
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