Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication - Archive ouverte HAL
Poster De Conférence Année : 2014

Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication

Résumé

We present a novel approach to bound any substrate on a silicon host platform, in the particular case of the realization of InP based vertical cavity surface emitting lasers (VCSEL). This process is based on a mechanical bonding, using electroplated copper through silicon vias. It enables a cost effective bonding with a low induced stress, and a significant improvement of the device thermal properties. Preliminary results are presented on the realization of light emitting diodes.
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Dates et versions

hal-01112963 , version 1 (04-02-2015)

Identifiants

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Fethallah Taleb, Christophe Levallois, Cyril Paranthoen, Nicolas Chevalier, Olivier de Sagazan, et al.. Substrate bonding using electroplated copper through silicon vias for VCSEL fabrication. 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, Indium Phosphide and Related Materials Proceedings (IPRM 2014), 26th International Conference on, pp.P21, 2014, ⟨10.1109/ICIPRM.2014.6880543⟩. ⟨hal-01112963⟩
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