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Communication Dans Un Congrès Année : 2014

Spectroscopic properties of BN layers

Résumé

h-BN is a wide band gap semiconductor (6.4 eV), which can be synthesized, as graphite, its carbon analog, as bulk crystallites, nanotubes and layers. These structures meet a growing interest for deep UV LED and graphene engineering. In this talk, we will report on the interplay between the structure, defects and luminescence properties of different BN structures and how these properties can be further exploited for the characterization of h-BN layers as a function of their thickness.

Domaines

Matériaux
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Dates et versions

hal-01111539 , version 1 (30-01-2015)

Identifiants

  • HAL Id : hal-01111539 , version 1

Citer

L. Schué, A. Pierret, J. Barjon, F. Fossard, F. Ducastelle, et al.. Spectroscopic properties of BN layers. Graphene 2014, May 2014, TOULOUSE, France. ⟨hal-01111539⟩
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