Communication Dans Un Congrès Année : 2014

TEM and cathodoluminescence with nanometric spatial resolution on BN nanostructures

Résumé

Hexagonal boron nitride (h-BN) is a wide band gap semiconductor (6.4 eV), which can be synthesized, as graphite, its carbon analog, as bulk crystallites, nanotubes and layers. These structures meet a growing interest for deep UV LED and graphene engineering. In this talk, we will review the interplay between the structure, defects and luminescence properties of different BN structures and how these properties can be further exploited for their characterization.

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hal-01111516 , version 1 (02-02-2015)

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  • HAL Id : hal-01111516 , version 1

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A. Pierret, L. Schué, F. Fossard, S. Moldovan, O. Ersen, et al.. TEM and cathodoluminescence with nanometric spatial resolution on BN nanostructures. 18th International Microscopy Congress, Sep 2014, Prague, Czech Republic. ⟨hal-01111516⟩
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