Structural and dielectric characterization of (Sr,La)-(Ta,Ti)-O-N oxide and oxynitride thin films grown by RF reactive magnetron sputtering - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Structural and dielectric characterization of (Sr,La)-(Ta,Ti)-O-N oxide and oxynitride thin films grown by RF reactive magnetron sputtering

Résumé

In the field of microwaves, high-performance materials needs drive the research on perovskite compounds which present attractive dielectric and ferroelectric properties. Our contribution is related to the development of oxide and oxynitride materials within the (Sr,La)-(Ta,Ti)-O-N system. In this composition range, the oxygen/nitrogen substitution can be used to monitor the dielectric properties [1]; furthermore, the Curie temperature (TC) of the ferroelectric solid solution (Sr1-xLax)(Ta1-xTix)-O-N could be adjusted close to room temperature by the variation of x [2]. The materials were deposited by reactive magnetron radio frequency sputtering using a (Sr0.99La0.01)2(Ta0.99Ti0.01)2O7 target. This target was shaped by uniaxial compaction of powder synthesized by conventional solid state route. By using pure argon or reactive Ar + O2 sputtering plasmas, oxide films were produced. X-ray Diffraction (XRD) reveals that Sr2Ta2O7-type films with a preferred (011) orientation can be grown on MgO(001) and Nb-SrTiO3(001) substrates. By using reactive nitrogen plasmas, SrTaO2N-type oxynitride films with a (001) orientation were epitaxially grown on the above mentioned substrates. Low and high frequency dielectric properties of films will be discussed in relation to their deposition conditions and morphological, optical and structural characteristics. [1] Y. Lu, C. Le Paven, H. V. Nguyen, R. Benzerga, L. Le Gendre, S. Rioual, F. Tessier, F. Cheviré, A. Sharaiha, C. Delaveaud, X. Castel, Crys. Growth Design 13 (2013) 4852-4858. [2] S. Nanamatsu, M. Kimura, K. Doi, S.Matsushita, N. Yamada, Ferroelectrics 8 (1974) 511-513.

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Matériaux
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Dates et versions

hal-01109296 , version 1 (26-01-2015)

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  • HAL Id : hal-01109296 , version 1

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Simon Jacq, Laurent Le Gendre, Claire Le Paven-Thivet, Ratiba Benzerga, Meriem Bouchilaoun, et al.. Structural and dielectric characterization of (Sr,La)-(Ta,Ti)-O-N oxide and oxynitride thin films grown by RF reactive magnetron sputtering. The 4th NIMS-UR1 Workshop 2014, NIMS, Oct 2014, Tsukuba, Japan. ⟨hal-01109296⟩
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