Polariton-generated intensity squeezing in semiconductor micropillars - Archive ouverte HAL Access content directly
Journal Articles Nature Communications Year : 2013

Polariton-generated intensity squeezing in semiconductor micropillars

Abstract

The generation of squeezed and entangled light fields is a crucial ingredient for the implementation of quantum information protocols. In this context, semiconductor materials offer a strong potential for the implementation of on-chip devices operating at the quantum level. Here we demonstrate a novel source of continuous variable squeezed light in pillar-shaped semiconductor microcavities in the strong coupling regime. Degenerate polariton four-wave mixing is obtained by exciting the pillar at normal incidence. We observe a bistable behavior and we demonstrate the generation of squeezing near the turning point of the bistability curve. The confined pillar geometry allows for a larger amount of squeezing than planar microcavities due to the discrete energy levels protected from excess noise. By analyzing the noise of the emitted light we obtain a measured intensity squeezing of 20.3%, inferred to be 35.8% after corrections.
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Dates and versions

hal-01092955 , version 1 (11-12-2014)

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T Boulier, M Bamba, A Amo, Claire Adrados, A Lemaitre, et al.. Polariton-generated intensity squeezing in semiconductor micropillars. Nature Communications, 2013, pp.10.1038/ncomms4260. ⟨10.1038/ncomms4260⟩. ⟨hal-01092955⟩
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