Electronic and Optical Properties in the Tight-Binding Method
Résumé
We show how the extended-basis spds* tight-binding model can be used to compute accurately the physical properties of tetrahedrally bonded semiconductor structures. This approach is particular suited for investigating the nanoscale material properties lying at the interface of material science and engineering. Nonlinear optical simulations in III-V semiconductors are presented with accurate benchmark calculations of ultra-short period
GaAs/AlAs superlattices.