Strongly correlated alignment of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue ChemPhysChem Année : 2014

Strongly correlated alignment of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors

Résumé

The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

Dates et versions

hal-01068826 , version 1 (26-09-2014)

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Chang-Hyun Kim, Htay Hlaing, Marcia M. Payne, Kevin G. Yager, Yvan Bonnassieux, et al.. Strongly correlated alignment of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors. ChemPhysChem, 2014, 15 (14), pp.2913-2916. ⟨10.1002/cphc.201402360⟩. ⟨hal-01068826⟩
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