Millimeter-wave in situ tuner : an efficient solution to extract the noise parameters of SiGe HBTs in the whole 130-170 GHz range
Abstract
SiGe HBT noise parameters ( , and ) are for the first time extracted in the entire 130 - 170 GHz frequency range. This achievement is realized using a D-band on-chip source-pull system, which includes an impedance tuner integrated with the transistor under test. On-wafer noise power measurements on this system were performed for each tuner impedance state, from which are extracted the transistor noise parameters in the complete -band.