InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate
Résumé
We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.