Anodic bonded 2D semiconductors: from synthesis to device fabrication - Archive ouverte HAL Access content directly
Journal Articles Nanotechnology Year : 2013

Anodic bonded 2D semiconductors: from synthesis to device fabrication

Abstract

Two-dimensional semiconductors are increasingly relevant for emergent applications and devices, notably for hybrid heterostructures with graphene. We fabricate few-layer, large-area (a few tens of microns across) samples of the III-VI semiconductors GaS, GaSe and InSe using the anodic bonding method and characterize them by simultaneous use of optical microscopy, atomic force microscopy and Raman spectroscopy. Two-terminal devices with a gate are constructed to show the feasibility of applications based on these.
No file

Dates and versions

hal-01053499 , version 1 (31-07-2014)

Identifiers

Cite

Zhesheng Chen, Karim Gacem, Mohamed Boukhicha, Johan Biscaras, Abhay Shukla. Anodic bonded 2D semiconductors: from synthesis to device fabrication. Nanotechnology, 2013, 24 (41), pp.415708. ⟨10.1088/0957-4484/24/41/415708⟩. ⟨hal-01053499⟩
260 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More