Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100)
A. Ouerghi
(1)
,
A. Balan
(2)
,
C. Castelli
(2)
,
M. Picher
(1)
,
R. Belkhou
(3)
,
Mahmoud Eddrief
(4)
,
M. G. Silly
(3)
,
Massimiliano Marangolo
(4)
,
A. Shukla
(2)
,
F. Sirotti
(3)
A. Ouerghi
- Fonction : Auteur
- PersonId : 771800
- ORCID : 0000-0002-1898-2765
- IdRef : 089018559
Massimiliano Marangolo
- Fonction : Auteur
- PersonId : 763891
- ORCID : 0000-0001-6211-8168
- IdRef : 174702396
Résumé
The current process of growing graphene by thermal decomposition of 3C-SiC(100) on silicon is technologically attractive. Here, we study epitaxial graphene on single domain 3C-SiC films on off-axis Si(100). The structural and electronic properties of such graphene layers are explored by atomic force microscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy. Using low energy electron diffraction, we show that graphene exhibits single planar domains. Near-edge x-ray absorption fine structure is used to characterize the sample, which confirms that the graphene layers present sp(2) hybridization and are homogeneously parallel to the substrate surface
Domaines
Physique Quantique [quant-ph]Format du dépôt | Notice |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100)
|
Résumé |
en
The current process of growing graphene by thermal decomposition of 3C-SiC(100) on silicon is technologically attractive. Here, we study epitaxial graphene on single domain 3C-SiC films on off-axis Si(100). The structural and electronic properties of such graphene layers are explored by atomic force microscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy. Using low energy electron diffraction, we show that graphene exhibits single planar domains. Near-edge x-ray absorption fine structure is used to characterize the sample, which confirms that the graphene layers present sp(2) hybridization and are homogeneously parallel to the substrate surface
|
Auteur(s) |
A. Ouerghi
1
, A. Balan
2
, C. Castelli
2
, M. Picher
1
, R. Belkhou
3
, Mahmoud Eddrief
4
, M. G. Silly
3
, Massimiliano Marangolo
4
, A. Shukla
2
, F. Sirotti
3
1
LPN -
Laboratoire de photonique et de nanostructures
( 411 )
- Route de Nozay 91460 MARCOUSSIS
- France
2
IMPMC -
Institut de minéralogie et de physique des milieux condensés
( 3204 )
- Campus Boucicaut 140, rue de Lourmel 75015 - Paris
- France
3
SSOLEIL -
Synchrotron SOLEIL
( 1744 )
- L'Orme des Merisiers Saint-Aubin - BP 48 91192 GIF-sur-YVETTE CEDEX
- France
4
INSP -
Institut des Nanosciences de Paris
( 101592 )
- Université Pierre et Marie Curie Case 840 4 place Jussieu 75252 Paris Cedex 05
- France
|
Vulgarisation |
Non
|
Langue du document |
Anglais
|
Nom de la revue |
|
Audience |
Internationale
|
Date de publication |
2012
|
Volume |
101
|
Page/Identifiant |
2
|
Comité de lecture |
Oui
|
Domaine(s) |
|
Mots-clés |
en
ABSORPTION FINE-STRUCTURE, EDGE, GRAPHITE
|
DOI | 10.1063/1.4734396 |
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