Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100) - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2012

Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100)

Résumé

The current process of growing graphene by thermal decomposition of 3C-SiC(100) on silicon is technologically attractive. Here, we study epitaxial graphene on single domain 3C-SiC films on off-axis Si(100). The structural and electronic properties of such graphene layers are explored by atomic force microscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy. Using low energy electron diffraction, we show that graphene exhibits single planar domains. Near-edge x-ray absorption fine structure is used to characterize the sample, which confirms that the graphene layers present sp(2) hybridization and are homogeneously parallel to the substrate surface
Fichier non déposé

Dates et versions

hal-01053376 , version 1 (30-07-2014)

Identifiants

Citer

A. Ouerghi, A. Balan, C. Castelli, M. Picher, R. Belkhou, et al.. Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100). Applied Physics Letters, 2012, 101, pp.2. ⟨10.1063/1.4734396⟩. ⟨hal-01053376⟩
73 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More