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Article dans une revue Applied Physics Letters Année : 2012

Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100)

Résumé

The current process of growing graphene by thermal decomposition of 3C-SiC(100) on silicon is technologically attractive. Here, we study epitaxial graphene on single domain 3C-SiC films on off-axis Si(100). The structural and electronic properties of such graphene layers are explored by atomic force microscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy. Using low energy electron diffraction, we show that graphene exhibits single planar domains. Near-edge x-ray absorption fine structure is used to characterize the sample, which confirms that the graphene layers present sp(2) hybridization and are homogeneously parallel to the substrate surface
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Dates et versions

hal-01053376, version 1 (30-07-2014)

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A. Ouerghi, A. Balan, C. Castelli, M. Picher, R. Belkhou, et al.. Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100). Applied Physics Letters, 2012, 101, pp.2. ⟨10.1063/1.4734396⟩. ⟨hal-01053376⟩
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