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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2013

Atomic-scale Ge diffusion in strained Si revealed by quantitative scanning transmission electron microscopy

Résumé

Aberration-corrected scanning transmission electronmicroscopy is employed to investigate the local chemistry in the vicinity of a Si0.8Ge0.2/Si interface grown bymolecular-beamepitaxy.Atomic-resolution high-angle annular dark field contrast reveals the presence of a nonuniform diffusion of Ge from the substrate into the strained Si thin film. On the basis of multislice calculations, a model is proposed to quantify the experimental contrast, showing that the Ge concentration in the thin film reaches about 4% at the interface and decreases monotonically on a typical length scale of 10 nm. Diffusion occurring during the growth process itself therefore appears as a major factor limiting the abruptness of interfaces in the Si-Ge system
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Dates et versions

hal-01052674 , version 1 (28-07-2014)

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G. Radtke, Luc Favre, M. Couillard, Guillaume Amiard, Isabelle Berbezier, et al.. Atomic-scale Ge diffusion in strained Si revealed by quantitative scanning transmission electron microscopy. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87, pp.205309. ⟨10.1103/PhysRevB.87.205309⟩. ⟨hal-01052674⟩
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