A Compact 60GHz Power Amplifier using Slow- Wave Transmission Lines in 65nm CMOS
Résumé
This paper describes a 60GHz power amplifier implemented in 7-metal-layer 65nm Low-Power (LP) CMOS process. Matching networks with slow-wave transmission-lines are used to reduce the chip size and to optimize passive component performances. For a characteristic impedance of 47 ohms, these lines reach a quality factor of 19.4, an attenuation constant and an effective permittivity of 0.74dB/mm and 7 respectively. The power amplifier achieves 13.6dBm of saturated output power, 14.5dB of power gain and 9.3% of power added efficiency for a very small active area of 0.16mm² without pads.