Compatibility of p-metal oxide semiconductor technology with the epitaxial YBa2CU3O7-delta growth on Si
Résumé
The objective of our work is to achieve the fabrication of fully integrated monolithic semiconducting preamplifier/superconducting YBa2Cu3O7−δ (YBCO) microbolometers in order to enhance overall sensor performance. To our knowledge this paper reports the first cofabrication of a c-axis-oriented YBCO film with a critical temperature of 86 K and an active semiconducting device on the same silicon substrate. We proposed a process fabrication where the p-MOS field effect transistors (p-MOSFET) with a Pt-based metallization are fabricated first and the YBCO and buffer layers are deposited as the final step. After YBCO deposition the Pt-based multilayers present interconnect sheet resistivity of 0.45 Ω per square and specific contact resistivity of 2 × 10−4 Ω cm2. The drain current versus gate voltage (Vgs) and versus drain-source voltage (Vds) characteristics of a 30 µm wide 10 µm long transistor are finally given. It presents a transconductance gm = 8.7 × 10−5 A V−1 (at Vds = 10 Vand Vgs = −20 V) and a threshold voltage Vt = −6.53 V at 300 K.