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Article Dans Une Revue IEEE Electron Device Letters Année : 2014

Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading

Résumé

We propose to employ a grading of the molar fraction in the source region of III-V hetero-junction tunnel-FETs as a means to improve the on-current without degrading the subthreshold swing. Our full quantum simulations show that the molar-fraction grading increases the on-current by enlarging the hole wave function penetration from the source to the channel region. We also compare the performance of graded AlGaSb/InAs tunnel FETs and InAs MOSFETs and show that at V DS =0.3 V, the tunnel device can outperform the MOSFET in terms of both on-current and subthreshold slope.
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Dates et versions

hal-01002251 , version 1 (05-06-2014)

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S. Brocard, M.G. Pala, D. Esseni. Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading. IEEE Electron Device Letters, 2014, 35 (2), pp.184-186. ⟨10.1109/LED.2013.2295884⟩. ⟨hal-01002251⟩
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