Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2013

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hal-01002096 , version 1 (05-06-2014)

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F. Conzatti, M.G. Pala, D. Esseni, E. Bano. Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs. Solid-State Electronics, 2013, 88, pp.49-53. ⟨10.1016/j.sse.2013.04.005⟩. ⟨hal-01002096⟩
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