We have performed numerical simulations using the finite elements method in order to investigate magnetotransport in manganese doped germanium thin films. Up to now, several groups have reported similar transport measurements on (Ge,Mn) films obtained either by low temperature molecular beam epitaxy or by manganese implantation of germanium wafers. However, different physical interpretations have been proposed, including the existence of a diluted carrier-mediated ferromagnetic phase. Here, by carefully taking into account the morphology of (Ge,Mn) films (Mn-rich ferromagnetic inclusions in a highly diluted germanium matrix), we can reproduce some experimental findings. In particular, in order to observe high positive magnetoresistance and Hall angles, there are two requirements: (i) a strong anomalous Hall effect within Mn-rich inclusions and (ii) a conductivity contrast between these inclusions and the germanium matrix. Finally, we conclude that (Ge,Mn) films behave as granular ferromagnetic systems.