Power Loss Estimation in SiC Power BJTs
Résumé
Silicon Carbide (SiC) Bipolar Junction Transistors (BJTs) are promising power devices for high power and high temperature applications. For the improvement of transient speeds, effect of the driver base capacitor and anti-saturation diode are studied. To outline their switching performances, SiC BJTs with a blocking voltage of 1200 V are characterized under different base and load currents. Switching speeds and losses are investigated for temperature as high as 200°C.
Domaines
Energie électrique
Fichier principal
Power_Loss_Estimation_in_SiC_Power_BJTs_PCIM_CHEN_Cheng.pdf (729.73 Ko)
Télécharger le fichier
Origine | Fichiers produits par l'(les) auteur(s) |
---|
Loading...