Why Multilayer Graphene on 4H-SiC( 000 -1) Behaves Like a Single Sheet of Graphene - Archive ouverte HAL Access content directly
Journal Articles Physical Review Letters Year : 2008

Why Multilayer Graphene on 4H-SiC( 000 -1) Behaves Like a Single Sheet of Graphene

Abstract

We show experimentally that multilayer graphene grown on the carbon terminated SiC 000 1 surface contains rotational stacking faults related to the epitaxial condition at the graphene-SiC interface. Via firstprinciples calculation, we demonstrate that such faults produce an electronic structure indistinguishable from an isolated single graphene sheet in the vicinity of the Dirac point. This explains prior experimental results that showed single-layer electronic properties, even for epitaxial graphene films tens of layers thick.
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hal-00995748 , version 1 (23-05-2014)

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J. Hass, François Varchon, J. E. Milla'N-Otoya, M. Sprinkle, N. Sharma, et al.. Why Multilayer Graphene on 4H-SiC( 000 -1) Behaves Like a Single Sheet of Graphene. Physical Review Letters, 2008, 100, pp.125504. ⟨10.1103/PhysRevLett.100.125504⟩. ⟨hal-00995748⟩

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