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Communication Dans Un Congrès Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits Année : 2013

Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs

Résumé

Low frequency noise measurements were performed in n-channel UTBOX transistors fabricated on silicon on insulator (SOI) substrates. The noise spectra contain 1/f and Lorentzian components; it was found that the carrier number fluctuations are responsible for the 1/f noise; the variation of the low frequency noise versus temperature permits to identify traps in the silicon film and to make a correlation between the observed traps and some technological steps.
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Dates et versions

hal-00994155 , version 1 (22-07-2014)

Identifiants

  • HAL Id : hal-00994155 , version 1

Citer

V. Strobel, Bogdan Cretu, S.D. dos Santos, E. Simoen, Jean-Marc Routoure, et al.. Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs. 9th Workshop of the Thematic Network on SOI Technology, Devices and Circuits, Jan 2013, paris, France. 2 p. (CDROM). ⟨hal-00994155⟩
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