Excited-state spectroscopy of single Pt atoms in Si - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2008

Excited-state spectroscopy of single Pt atoms in Si

Résumé

Resonant peaks superimposed on the direct tunneling current in the low-temperature transport of Schottky barrier metal-oxide-semiconductor field-effect transistor inversion layers are investigated. The resonances are attributed to single Pt atoms that have diffused from the metallic contacts into the depletion width near the metal/semiconductor interface. Excited-state spectroscopy and magnetic fields are used to identify different levels. A double donor level in a singlet state and another level that is attributed to a triple donor state are observed.
Fichier non déposé

Dates et versions

hal-00984295 , version 1 (28-04-2014)

Identifiants

Citer

L.E. Calvet, J.P. Snyder, Wolfgang Wernsdorfer. Excited-state spectroscopy of single Pt atoms in Si. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78 (19), pp.195309. ⟨10.1103/PhysRevB.78.195309⟩. ⟨hal-00984295⟩
25 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More