Mutual thermal coupling in SiGe:C HBTs
Résumé
This paper studies the mutual thermal coupling in trench isolated SiGe:C HBTs featuring peak fT and peak fmax of ∼300GHz and ∼400GHz, respectively. Inter- and intra-device thermal coupling parameters are extracted on specially designed test structures consisting of a five-finger HBT and a five-transistor array. The obtained coupling parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between devices. Very good agreement is achieved between circuit simulations and measurements.