The rear metallization is an important element in order to improve the efficiency yield. Depending on the structure of the metal stack used to contact the doped areas, the reflectivity of this back reflector is considerably changed. In the literature, the metal stacks used to contact the cell are rather complex (Si/Al/Ti/Pd/Ag) in order to obtain a low contact resistivity for the n-doped and p-doped zones, a good mechanical bond and a good back surface reflectivity. We proposed in this paper, a simpler Si/Ti/Ag stack which does not need any annealing and provides electrical contacts able to improve the efficiency of an IBC (Interdigitated Back Contacts) solar cell.