The evolution of silicon cryoetching is reported in this topical review, from its very first introduction by a Japanese team to today's advanced technologies. The main advances in terms of the performance and comprehension of the mechanisms are chronologically presented. After presenting the principle of silicon cryoetching, the main defects encountered in cryoetching (such as undercut, bowing and crystal orientation dependent etching) are presented and discussed. Mechanisms involved in SiOxFy passivation layer growth in standard cryoetching are investigated through several in situ characterization experiments. The STiGer process and alternative cryoetching processes for high-aspect-ratio structures are also proposed to enhance the process robustness. The over-passivation regime, which can provide self-organized columnar microstructures, is presented and discussed. Finally, advanced technologies, such as the cryoetching of sub-20 nm features and porous OSG low-k cryoetching, are described.