Monte Carlo simulation of charge exchange processes in the scattering of 4 keV He+ ions by an amorphous silicon surface - Archive ouverte HAL
Article Dans Une Revue Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Année : 2007

Monte Carlo simulation of charge exchange processes in the scattering of 4 keV He+ ions by an amorphous silicon surface

K. Khalal-Kouache
  • Fonction : Auteur
A.C. Chami
  • Fonction : Auteur
M. Boudjema
  • Fonction : Auteur

Dates et versions

hal-00959308 , version 1 (14-03-2014)

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Citer

K. Khalal-Kouache, A.C. Chami, M. Boudjema, Claude Bénazeth. Monte Carlo simulation of charge exchange processes in the scattering of 4 keV He+ ions by an amorphous silicon surface. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2007, 258 (1), pp.40-43. ⟨10.1016/j.nimb.2006.12.085⟩. ⟨hal-00959308⟩
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