Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2014

Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

Résumé

We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.
Fichier principal
Vignette du fichier
MnAs_mod_new2.pdf (834.62 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00944462 , version 1 (10-02-2014)

Identifiants

Citer

Martino Trassinelli, M. Marangolo, M. Eddrief, Victor H. Etgens, V. Gafton, et al.. Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment. Applied Physics Letters, 2014, 104 (8), pp.081906. ⟨10.1063/1.4866663⟩. ⟨hal-00944462⟩
225 Consultations
258 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More