Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2014

Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment

Abstract

We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.
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Dates and versions

hal-00944462 , version 1 (10-02-2014)

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Martino Trassinelli, M. Marangolo, M. Eddrief, Victor H. Etgens, V. Gafton, et al.. Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment. Applied Physics Letters, 2014, 104 (8), pp.081906. ⟨10.1063/1.4866663⟩. ⟨hal-00944462⟩
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