Elaboration and Characterization of Interfacial Abruptness in Si/SiGe Heterostructured Nanowires obtained by VLS-CVD Method - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Elaboration and Characterization of Interfacial Abruptness in Si/SiGe Heterostructured Nanowires obtained by VLS-CVD Method

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hal-00944264 , version 1 (10-02-2014)

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  • HAL Id : hal-00944264 , version 1

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P. Periwal, T. Baron, G. Patriarche, D. Mariolle, N. Chevalier, et al.. Elaboration and Characterization of Interfacial Abruptness in Si/SiGe Heterostructured Nanowires obtained by VLS-CVD Method. Nanowire Growth, Jun 2013, Lausanne, Switzerland. ⟨hal-00944264⟩
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