Scaling of electronic device dimensions into the nanoscale regime has been at the basis of the semiconductor industry for several decades. Traditional materials have been pushed to their limits, which means that entirely new materials and new device structures are now required. The development of emerging technologies that include quantum confinement, spin transport, and molecular or correlated materials places increasingly stringent requirements on metrology of these novel devices. Advances in fundamental nanoscience, design of new nanostructures, and progresses in manufacturing of next-generation nanodevices will all depend on our ability to measure accurately and reproducibly the properties and performance characteristics at the nanometer scale over a wide frequency range.