We present a detailed theoretical analysis of biexciton state generation in InAs-GaAs quantum dots by strong, chirped laser pulses. Specifically, we derive an accurate analytical expression, which not only provides a clear physical picture of the process, but also allows identifications of laser parameter regimes where efficient biexciton generation should be possible, even at temperatures up to 80 K. The results are confirmed by numerical simulations, in very good agreement with the model proposed. A clear choice of parameters is proposed, which might pave the way towards the optimal design of high-fidelity sources of entangled photon pairs based on individual quantum dots