Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applications - Archive ouverte HAL
Communication Dans Un Congrès Année : 2013

Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applications

Fichier non déposé

Dates et versions

hal-00918729 , version 1 (14-12-2013)

Identifiants

  • HAL Id : hal-00918729 , version 1

Citer

Eric Tea, Charles Cornet, Antoine Létoublon, J. Vidal, Laurent Pedesseau, et al.. Ab initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applications. European Materials Research Society meeting E-MRS 2013, May 2013, Strasbourg, France. ⟨hal-00918729⟩
179 Consultations
0 Téléchargements

Partager

More