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Article Dans Une Revue Synthetic Metals Année : 2010

Semiconducting properties of thin films with embedded nanoparticles

Résumé

We demonstrate here the possibility of designing semiconducting thin films with controlled electrochemical properties. The thin films are composed of (i) an insulating binder and (ii) a semiconductor nanopowder which enables the fine tuning of the semiconducting properties of the layers. Thus, p-and n-type silicon particles (obtained from a top-down technique), or metal-oxide ZnO, SnO(2) and NiO nanoparticles (synthesized using a bottom-up protocol) are successfully integrated into spin-coated or screen-printed thin films and used as semiconducting materials. The flat band potential (Vfb) of the films is then easily tuned from DV to -1.138 V. (C) 2010 Elsevier B.V. All rights reserved.
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hal-00916444 , version 1 (10-12-2013)

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  • HAL Id : hal-00916444 , version 1

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Mouhssine Benlarbi, Carole Farre, Carole Chaix, Marcus F. Lawrence, Loïc J. Blum, et al.. Semiconducting properties of thin films with embedded nanoparticles. Synthetic Metals, 2010, 160 (23-24), pp.2675-2680. ⟨hal-00916444⟩
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