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Article Dans Une Revue Applied Physics Letters Année : 2010

Tunnel barrier parameters derivation from normalized differential conductance in Hg/organic monomolecular layer-Si junctions

Résumé

The shape of tunnel barrier junctions is derived from experimental current density versus bias, J(V), using the normalized differential conductance, NDC=d log J/d log V, to discriminate barrier height, ΦT, and barrier width, dT, effects. Parameterization of the Simmons model for a rectangular tunnel barrier, with NDC≈dTV/(ΦT-qV)1/2, provides physical (dT,ΦT) values for Hg||monomolecular layer--n Si(111) junctions incorporating functionalized n-alkyl layers covalently bonded to silicon.
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hal-00914851 , version 1 (06-12-2013)

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Christian Godet, Alain-Bruno Fadjie-Djomkam, Soraya Ababou-Girard, Francine Solal. Tunnel barrier parameters derivation from normalized differential conductance in Hg/organic monomolecular layer-Si junctions. Applied Physics Letters, 2010, 97 (13), pp.132105 - 132105-3. ⟨10.1063/1.3493650⟩. ⟨hal-00914851⟩
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